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Product details

RN49A1FE(TE85L,F)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6

Datasheet Not provided

Specifications

Base Product Number: RN49A1
Current - Collector (Ic) (Max): 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SOT-563, SOT-666
Power - Max: 100mW
Resistor - Base (R1): 2.2kOhms, 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Series: -
Supplier Device Package: ES6
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V