RN2711,LF product image

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Product details

RN2711,LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 200mW Surface Mount USV

Datasheet Not provided

Specifications

Base Product Number: RN2711
Current - Collector (Ic) (Max): 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Power - Max: 200mW
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): -
Series: -
Supplier Device Package: USV
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V