FJP13009H2TU product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

FJP13009H2TU

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: TO-220-3

Description

Bipolar (BJT) Transistor NPN 400 V 12 A 4MHz 100 W Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: FJP13009
Current - Collector (Ic) (Max): 12 A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Frequency - Transition: 4MHz
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 100 W
Series: -
Supplier Device Package: TO-220-3
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max): 400 V