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SS8050DBU product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

SS8050DBU

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92-3

Description

Bipolar (BJT) Transistor NPN 25 V 1.5 A 100MHz 1 W Through Hole TO-92-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
SS8050
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA, 1V
Frequency - Transition
100MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Power - Max
1 W
Series
-
Supplier Device Package
TO-92-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 80mA, 800mA
Voltage - Collector Emitter Breakdown (Max)
25 V

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