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BU508AFI product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BU508AFI

Availability on request

Manufacturer
STMicroelectronics
Category
Transistors - Bipolar (BJT) - Single
Package
ISOWATT-218FX

Description

Bipolar (BJT) Transistor NPN 700 V 8 A 7MHz 50 W Through Hole ISOWATT-218FX

Specifications
Base Product Number
BU508
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
7MHz
Mfr
STMicroelectronics
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
ISOWATT-218-3
Power - Max
50 W
Series
-
Supplier Device Package
ISOWATT-218FX
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 2A, 4.5A
Voltage - Collector Emitter Breakdown (Max)
700 V